BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 4

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 26
Per transistor section
V
I
I
V
g
g
R
I
C
C
C
C
SYMBOL
j
DSS
GSS
DSX
GS
GROUP
fs
fs1
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
d-f
VHF push-pull power MOS transistor
GS
/g
group indicator
G
M
A
B
C
D
E
H
K
N
F
L
J
fs2
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
both transistor sections
forward transconductance
forward transconductance ratio of
both transistor sections
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETERS
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
I
V
V
V
V
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 100 mA; V
= 100 mA; V
= 8 A; V
= 8 A; V
= 8 A; V
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
D
CONDITIONS
4
DS
DS
DS
DS
DS
DS
DS
= 100 mA
GROUP
= 32 V
= 10 V
= 10 V
= 10 V
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
= 32 V; f = 1 MHz
DS
DS
DS
DS
W
O
Q
P
R
S
U
V
X
Y
T
Z
= 10 V
= 10 V
= 10 V
= 0
65
2
5
0.9
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
7.5
0.1
37
495
340
40
5.4
TYP.
LIMITS
Product specification
(V)
5
1
4.5
100
1.1
0.15
MAX.
BLF368
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
pF
UNIT
A