BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 11

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

Philips Semiconductors
2003 Sep 26
handbook, full pagewidth
VHF push-pull power MOS transistor
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Dimensions in mm.
hollow rivets
L1
L3
V DD1
Fig.13 Component layout for 225 MHz class-AB test circuit.
L2
119
R9
C1
C2
C34
C3
IC1
C11
L4
L5
C8
slider R1
slider R6
to R1, R6
C5
copper strap
R2
R5
C33
C31
C32
R3
R4
L6
C10
C4
L7
C9
C6
C7
L8
L9
100
11
C18
L10
L11
C19
C22
C13
C14
C25
C26
L16
L17
L13
C23
C24
L14
hollow rivet
L12
L12
R7
L15
L15
R8
L18
L19
C12
C15
C27
V DD1
V DD2
C16
C21
C17
C20
L20
C28
L21
C29
C30
copper strap
130
L23
hollow rivets
L24
L22
Product specification
BLF368
MGP213