BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 7

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.9
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.11 Load power as a function of input power;
L
L
(W)
P L
(dB)
= 1.34
= 1.34
G p
500
400
300
200
100
20
16
12
8
4
0
0
0
Power gain as a function of load power;
typical values per section.
typical values per section.
h
h
j0.34
j0.34
= 25 C. dotted line: T
= 25 C. dotted line: T
100
(per section); R
(per section); R
DS
DS
10
= 32 V; I
= 32 V; I
200
DQ
DQ
h
GS
GS
h
= 70 C.
= 2
= 2
= 70 C.
300
= 536
= 536
20
250 mA;
250 mA;
(per section);
(per section);
P IN (W)
400
P L (W)
MGP239
MGP240
500
30
7
handbook, halfpage
Class-AB operation; V
Z
f = 225 MHz.
solid line: T
Fig.10 Efficiency as a function of load power;
L
(%)
= 1.34
D
80
60
40
20
0
0
typical values per section.
h
j0.34
= 25 C. dotted line: T
100
(per section); R
DS
= 32 V; I
200
DQ
h
GS
= 70 C.
= 2
300
= 536
250 mA;
Product specification
(per section);
400
P L (W)
BLF368
MGP241
500