BLF368,112 NXP Semiconductors, BLF368,112 Datasheet - Page 8

• Manufacturer Part Number: BLF368,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF368,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Current - Test: 250mA
• Voltage - Test: 32V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 300W
• Power Gain (typ)@vds: 15@28VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 495@32VpF
• Output Capacitance (typ)@vds: 340@32VpF
• Reverse Capacitance (typ): 40@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW Class-AB
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2390; 933978490112; BLF368; BLF368

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f = 225 MHz.
V DD1
50
input
R9
C34
L2
L1
L3
IC1
C1
C2
L4
L5
A
A
C3
C32
C4
C33
Fig.12 Test circuit for class-AB operation.
C6
L7
C7
C31
L6
C5
R1
R6
L8
L9
R2
R3
R4
R5
C10
C11
C8
C9
D.U.T.
C14
C15
C12
C13
L10 L16
L11
C22
V DD1
V DD2
R7
R8
L17
L13
L14
C16
C18
C17
C20
C21
C19
L12
L15
C23
C25
C26
C24
MGP211
L18
L19
C27
L20
L21
C28
C29
C30
L22
L24
L23
output
50