IPD16CNE8N G Infineon Technologies, IPD16CNE8N G Datasheet - Page 7

• Manufacturer Part Number: IPD16CNE8N G
• Description: MOSFET N-CH 85V 53A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD16CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 53A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 61µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 3230pF @ 40V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096455

Rev. 1.07
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
100
1
95
90
85
80
75
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[µs]
[°C]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
IPB16CNE8N G
=53 A pulsed
g s
IPI16CNE8N G
10
Q
Q
gate
g
Q
20
sw
[nC]
Q
g d
IPD16CNE8N G
IPP16CNE8N G
20 V
30
60 V
40 V
Q
g ate
2010-04-27
40