IPD16CNE8N G Infineon Technologies, IPD16CNE8N G Datasheet - Page 2

• Manufacturer Part Number: IPD16CNE8N G
• Description: MOSFET N-CH 85V 53A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD16CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 53A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 61µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 3230pF @ 40V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096455

Rev. 1.07
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252)
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO252)
V
(TO263)
V
(TO220, TO262)
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
=25 °C
=125 °C
=53 A
DS
=V
=68 V, V
=68 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
=10 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
D
=61 µA
GS
GS
DS
DS(on)max
=53 A,
=53 A,
=53 A,
=0 V,
=0 V,
=0 V
4)
4)
,
IPB16CNE8N G
IPI16CNE8N G
min.
85
33
2
-
-
-
-
-
-
-
-
-
-
-
-
Values
12.2
12.4
12.7
typ.
0.1
1.2
10
65
3
1
-
-
-
-
-
-
IPD16CNE8N G
IPP16CNE8N G
max.
16.2
16.5
100
100
1.5
62
40
75
50
16
4
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2010-04-27