IPD16CNE8N G Infineon Technologies, IPD16CNE8N G Datasheet - Page 4

• Manufacturer Part Number: IPD16CNE8N G
• Description: MOSFET N-CH 85V 53A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD16CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 53A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 61µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 3230pF @ 40V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096455

Rev. 1.07
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
120
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
DC
[°C]
[V]
10 ms
10
100 µs
1
1 ms
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
10
60
50
40
30
20
10
C
0
-1
-2
1
0
); V
10
p
0
0.01
)
0.02
-5
0.05
0.2
0.5
0.1
GS
single pulse
≥10 V
IPB16CNE8N G
p
10
IPI16CNE8N G
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPD16CNE8N G
IPP16CNE8N G
150
10
-1
2010-04-27
200
10
0