IPD16CNE8N G Infineon Technologies, IPD16CNE8N G Datasheet - Page 5

• Manufacturer Part Number: IPD16CNE8N G
• Description: MOSFET N-CH 85V 53A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD16CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 53A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 61µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 3230pF @ 40V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096455

Rev. 1.07
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
250
200
150
100
200
150
100
50
50
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
2
D
|R
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
V
V
6.5 V
GS
DS
4
10 V
[V]
[V]
175 °C
7 V
3
25 °C
8 V
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
80
60
40
20
50
45
40
35
30
25
20
15
10
0
D
=f(I
5
0
); T
0
0
4.5 V
D
j
); T
=25 °C
GS
IPB16CNE8N G
j
=25 °C
IPI16CNE8N G
5 V
20
20
I
I
D
D
[A]
[A]
5.5 V
IPD16CNE8N G
40
IPP16CNE8N G
40
10 V
6 V
2010-04-27
60
60