IPD16CNE8N G Infineon Technologies, IPD16CNE8N G Datasheet
IPD16CNE8N G
Specifications of IPD16CNE8N G
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IPD16CNE8N G Summary of contents
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... =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =100 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N (TO252) 16 mΩ IPP16CNE8N G PG-TO220-3 16CNE8N Value Unit 212 107 mJ 6 kV/µs ±20 V 100 W -55 ... 175 °C 55/175/56 2010-04-27 ...
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... V = =125 ° = GSS = = DS(on) (TO252 (TO263 (TO220, TO262 |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Values Unit min. typ. max 1.5 K 0.1 1 µ 100 - 1 100 nA - 12.2 16 mΩ - 12.4 16.2 - 12.7 16.5 Ω ...
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... Rev. 1.07 Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω I =26 d(off = = plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Values Unit min. typ. max. - 2430 3230 pF - 452 601 - 5 212 - 1 1 110 - ns - 210 - nC 2010-04-27 ...
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... Rev. 1.07 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µ 100 µ [V] DS page 4 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2010-04-27 ...
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... V 100 5 4 Typ. transfer characteristics I =f |>2 DS(on)max parameter 200 150 100 Rev. 1.07 6 Typ. drain-source on resistance R =f(I DS(on) parameter [ Typ. forward transconductance g =f 175 °C 25 ° [V] GS page 5 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N =25 ° 4 5 [A] D =25 ° [ 2010-04-27 ...
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... GS(th) parameter 3.5 3 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N 610 µA 61 µA - 100 140 T [° °C 175 °C 175 °C, 98% 25 °C, 98% 0.5 1 1.5 V [V] SD 180 2 2010-04-27 ...
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... AV 15 Drain-source breakdown voltage V =f BR(DSS 100 -60 - Rev. 1.07 14 Typ. gate charge V =f(Q GS gate parameter °C 8 100 ° 100 1000 0 [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N =53 A pulsed [nC] gate ate 2010-04-27 ...
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... PG-TO220-3: Outline Rev. 1.07 IPB16CNE8N G IPI16CNE8N G page 8 IPD16CNE8N G IPP16CNE8N G 2010-04-27 ...
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... PG-TO262-3-1 (I²PAK) Rev. 1.07 IPB16CNE8N G IPI16CNE8N G page 9 IPD16CNE8N G IPP16CNE8N G 2010-04-27 ...
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... PG-TO-263 (D²-Pak) Rev. 1.07 IPB16CNE8N G IPI16CNE8N G page 10 IPD16CNE8N G IPP16CNE8N G 2010-04-27 ...
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... PG-TO252-3: Outline Rev. 1.07 IPB16CNE8N G IPI16CNE8N G page 11 IPD16CNE8N G IPP16CNE8N G 2010-04-27 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.07 IPB16CNE8N G IPI16CNE8N G page 12 IPD16CNE8N G IPP16CNE8N G 2010-04-27 ...