SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 7

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
70
65
60
55
50
AV
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
1
T
t
AV
j
60
[°C]
[µs]
125 °C
100
10
2
100 °C
140
25 °C
page 7
180
10
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
16
14
12
10
8
6
4
2
0
0
gate
); I
DD
D
=-8.8 A pulsed
3
6
Q
gate
12 V
[nC]
9
SPU-D08P06P
30 V
48 V
12
2008-02-18
15