SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 4

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
40
30
20
10
DS
0
-1
-2
2
1
0
A
10
0
); T
)
-1
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
0
80
T
-V
A
DS
[°C]
[V]
120
10
1
DC
10 ms
1 ms
100 µs
160
10 µs
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
A
9
8
7
6
5
4
3
2
1
0
-1
1
0
); |V
10
p
0
)
0.02
-5
0.05
0.01
0.1
single pulse
0.2
0.5
GS
10
|≥10 V
p
-4
/T
40
10
-3
10
80
T
-2
t
A
p
[°C]
[s]
10
-1
SPU-D08P06P
120
10
0
10
160
1
2008-02-18
10
2