SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 3

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
R
V
V
T
V
T
V
di
page 3
A
j
GS
DD
DD
GS
GS
R
G
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-30 V, V
=-48 V, I
=0 to -10 V
=0 V, I
D
=-6.2 A,
F
F
DS
=-8.83 A,
=|I
D
=-25 V,
GS
=-8.8 A,
S
|,
=-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.98
16.0
46.0
typ.
335
105
-1.9
100
-10
65
48
14
60
-5
-6
-
-
SPU-D08P06P
max.
-8.80
-35.3
-1.55
24.0
-2.6
420
135
150
-13
95
69
72
21
90
-8
-
Unit
pF
nC
V
A
V
ns
nC
2008-02-18