SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 6

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
700
600
500
400
300
200
100
10
10
10
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=-6.2 A; V
5
typ.
20
10
GS
-V
T
=-10 V
j
DS
60
[°C]
98 %
[V]
15
100
Ciss
Coss
Crss
20
140
page 6
180
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
4.5
3.5
2.5
1.5
0.5
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
175 °C, 98%
j
); V
j
GS
-20
0.5
=V
25 °C, typ
DS
25 °C, 98%
20
; I
1
D
=-250 µA
-V
min.
T
175 °C, typ
j
SD
1.5
60
[°C]
typ.
[V]
max.
SPU-D08P06P
100
2
140
2.5
2008-02-18
180
3