SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet - Page 5

• Manufacturer Part Number: SPD08P06P G
• Description: MOSFET P-CH 60V 8.83A TO-252
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096087; SPD08P06P G; SPD08P06PGINTR; SPD08P06PGXT

Rev 1.6
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
18
15
12
DS
GS
9
6
3
0
6
5
4
3
2
1
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
1
1
|>2|I
2
2
D
|R
125 °C
DS(on)max
-20 V
3
3
-V
-V
-10 V
DS
GS
4
-7 V
4
-4 V
25 °C
-5V
-5.5 V
-4.5 V
[V]
[V]
-6 V
5
5
6
6
7
7
page 5
8
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
1000
900
800
700
600
500
400
300
200
100
D
=f(I
0
6
5
4
3
2
1
0
); T
0
0
-4 V
D
j
); T
=25 °C
-4.5 V
GS
2
j
=25 °C
-5 V
2
4
-5.5 V
6
4
-I
-I
D
D
-6 V
[A]
[A]
8
-20V
-10 V
6
SPU-D08P06P
-7 V
10
12
8
14
2008-02-18
10