SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 7

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
650
550
500
450
400
350
300
250
200
150
100
120
114
112
110
108
106
104
102
100
= f (T
V
50
98
96
94
92
90
D
0
-60
20
SPP47N10
= 47 A , V
j
= f (T
)
40
-20
60
j
)
20
DD
80
= 25 V, R
60
100
100
120
GS
140
140
= 25
°C
°C
T
T
Preliminary data
j
j


180
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP47N10
Gate
D
20
= 47 A pulsed
)
40
0,2
SPP47N10,SPB47N10
V
DS max
60
0,8 V
2001-08-24
80
SPI47N10
DS max
nC
Q
Gate
110