SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 5

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
120
100
A
A
90
80
70
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
0
5
0
0
0
SPP47N10
DS
GS
P
tot
1
); T
1
); V
= 175W
p
p
= 80 µs
2
= 80 µs
j
DS
=25°C
2
l
3

k
2 x I
3
j
4
D
4
5
x R
i
6
5
DS(on)max
7
6
g
e
c
a
h
f
d
b
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
V
Preliminary data
10.0
20.0
GS
DS
4.0
4.5
5.0
5.5
6.0
6.5
7.5
8.0
9.0
9.0
8
10
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f(I
100


S
80
70
60
50
40
30
20
10
35
25
20
15
10
5
0
0
0
D
= f (I
); T
j
10
=25°C
D
20
fs
GS
)
20
40
SPP47N10,SPB47N10
30
60
40
2001-08-24
80
SPI47N10
A
A
vgs[V]
5V
5.5V
6V
6.5V
7V
7.5V
8V
9V
10V
I
20V
I
D
D
110
60