SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 3

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Preliminary data
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=33A
=47A, R
=25°C
=50V, I
/dt=100A/µs

=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
2 *I
Conditions
D
*R
F =
G
F
DS
D
D
D
=94A
=4.7
DS(on)max
GS
l
S
=47A
=47A,
=47A
=25V,
,
=10V,


,
min.
13
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-
-
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-
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-
-
-
-
-
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SPP47N10,SPB47N10
Values
2000
6.03
typ.
370
190
100
400
1.1
26
25
23
63
15
19
29
70
-
-
2001-08-24
max.
2500 pF
22.5
28.5
43.5
465
240
105
188
150
600
SPI47N10
1.5
39
36
99
47
-
-
Unit
S
ns
nC
V
A
V
ns
nC