SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 6

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m


10
pF
10
10
130
110
100
90
80
70
60
50
40
30
20
10
0
-60
4
3
2
0
SPP47N10
DS
= f (T
)
5
-20
D
GS
j
)
= 33 A, V
10
=0V, f=1 MHz
20
15
98%
60
typ
20
GS
100
= 10 V
25
30
140 °C
V
T
V
C
C
C
Preliminary data
j
DS
iss
oss
rss
200
40
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
4.4
3.6
3.2
2.8
2.4
1.6
1.2
0.8
0.4
A
V
5
4
2
0
-60
3
2
1
0
0
= f (T j )
SD
SPP47N10
)
0.4
-20
GS
0.8
p
= V
20
= 80 µs
DS
1.2
SPP47N10,SPB47N10
T
T
T
T
j
j
j
j
60
, I
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
D
1.6
= 2 mA
100
2
2001-08-24
140
SPI47N10
2.4
V
T
V
V
j
SD
min
max
typ
200
3