SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 2

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
= 2 mA
=100V, V
=100V, V
=0V, I
=20V, V
=10V, I
2
cooling area
D
D
=2mA
DS
=33A
GS
GS
=0V
=0V, T
=0V, T
1)
j
j
=25°C
=150°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Preliminary data
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
100
2.1
-
-
-
-
-
-
-
-
SPP47N10,SPB47N10
Values
Values
typ.
typ.
0.1
10
25
3
-
-
-
-
-
-
max.
max.
100
0.85
100
33
62
62
40
2001-08-24
1
4
-
SPI47N10
Unit
V
µA
nA
m
Unit
K/W