PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet - Page 8

• Manufacturer Part Number: PHX9NQ20T,127
• Description: MOSFET N-CH 200V 5.2A TO220F
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHX9NQ20T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055769127; PHX9NQ20T; PHX9NQ20T

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
November 2000
N-channel TrenchMOS
Dimensions in mm
Net Mass: 2 g
damage to MOS gate oxide.
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT186
4.4
4.0
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
A
2.9
2.5
A 1
transistor
0.9
0.7
b
1.5
1.3
IEC
b 1
D
L
D 1
L 2
0.55
0.38
c
b 1
17.0
16.4
1
D
TO-220
JEDEC
e
2
D 1
7.9
7.5
E 1
e 1
E
P
b
8
3
REFERENCES
10.2
9.6
E
0
E 1
5.7
5.3
w
L 1
m
M
scale
2.54
EIAJ
e
5
q
5.08
e 1
10 mm
PHX9NQ20T , PHF9NQ20T
14.3
13.5
L
L 1
4.8
4.0
(1)
L 2
10
Q
A 1
0.9
0.5
m
A
PROJECTION
EUROPEAN
c
3.2
3.0
P
Product specification
1.4
1.2
Q
4.4
4.0
q
ISSUE DATE
97-06-11
0.4
w
Rev 1.100
SOT186