PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet - Page 6

• Manufacturer Part Number: PHX9NQ20T,127
• Description: MOSFET N-CH 200V 5.2A TO220F
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHX9NQ20T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055769127; PHX9NQ20T; PHX9NQ20T

Philips Semiconductors
November 2000
N-channel TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
10
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
I
F
0
0
Source-Drain Diode Current, IF (A)
Gate-source voltage, VGS (V)
= f(V
ID = 9 A
Tj = 25 C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Fig.14. Typical reverse diode current.
VGS = 0 V
SDS
5
); conditions: V
Source-Drain Voltage, VSDS (V)
10
Gate charge, QG (nC)
VDD = 40 V
V
GS
15
= f(Q
150 C
GS
20
G
= 0 V; parameter T
)
VDD = 160 V
transistor
25
Tj = 25 C
1
30
1.1 1.2
35
j
6
avalanche current (I
0.1
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
unclamped inductive load
Tj prior to avalanche = 150 C
PHX9NQ20T , PHF9NQ20T
0.01
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);