PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet - Page 2

• Manufacturer Part Number: PHX9NQ20T,127
• Description: MOSFET N-CH 200V 5.2A TO220F
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHX9NQ20T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055769127; PHX9NQ20T; PHX9NQ20T

Philips Semiconductors
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
November 2000
N-channel TrenchMOS
SYMBOL PARAMETER
E
I
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
j
= 25˚C unless otherwise specified
AS
GSS
DSS
d on
r
d off
f
fs
d
s
AS
(BR)DSS
GS(TO)
th j-hs
th j-a
DS(ON)
iss
oss
rss
g(tot)
gs
gd
Non-repetitive avalanche
energy
Peak non-repetitive
avalanche current
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
transistor
CONDITIONS
Unclamped inductive load, I
t
V
to fig;15
CONDITIONS
SOT186A package, in free air
CONDITIONS
V
V
V
V
V
I
V
V
Resistive load
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
p
D
DD
GS
DS
GS
DS
GS
DS
DD
GS
GS
= 100 s; T
= 9 A; V
= 0 V; I
= V
= 10 V; I
= 25 V; I
=
= 200 V; V
= 100 V; R
= 10 V; R
= 0 V; V
25 V; R
GS
10 V; V
; I
DD
D
D
DS
= 160 V; V
D
D
= 0.25 mA;
= 1 mA
j
GS
G
= 4.5 A
= 4.5 A
prior to avalanche = 25˚C;
GS
2
= 25 V; f = 1 MHz
D
DS
= 5.6
= 50 ; V
= 10 ;
= 0 V
= 0 V
GS
= 10 V
GS
AS
= 10 V; refer
= 7.2A;
T
T
T
T
T
j
j
j
PHX9NQ20T , PHF9NQ20T
j
j
= 150˚C
= 150˚C
= 150˚C
= -55˚C
= -55˚C
MIN.
MIN.
200
178
3.8
MIN.
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
TYP. MAX. UNIT
0.05
Product specification
300
959
4.5
7.5
55
10
24
12
19
25
15
93
54
3
6
4
8
-
-
-
-
-
-
MAX.
8.7
93
0.94
400
100
500
10
5
4
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.100
UNIT
mJ
K/W
K/W
A
m
nC
nC
nC
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
V
S
A
A