PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet

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PHX9NQ20T,127

Manufacturer Part Number
PHX9NQ20T,127
Description
MOSFET N-CH 200V 5.2A TO220F
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHX9NQ20T127.pdf (9 pages)

Specifications of PHX9NQ20T,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
959pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055769127
PHX9NQ20T
PHX9NQ20T
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
November 2000
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
case
, T
PIN
1
2
3
stg
gate
drain
source
isolated
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
DESCRIPTION
transistor
SYMBOL
SOT186A (FPAK)
CONDITIONS
T
T
T
T
T
T
j
j
hs
hs
hs
hs
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
g
case
GS
1
GS
1 2 3
d
s
= 10 V
= 10 V
GS
= 20 k
PHX9NQ20T , PHF9NQ20T
QUICK REFERENCE DATA
SOT186 (FPAK)
R
MIN.
DS(ON)
- 55
V
-
-
-
-
-
-
-
DSS
I
case
D
Product specification
= 5.2 A
= 200 V
1 2 3
400 m
MAX.
200
200
150
5.2
3.3
21
25
20
Rev 1.100
UNIT
˚C
W
V
V
V
A
A
A

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PHX9NQ20T,127 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. ...

Page 2

Philips Semiconductors N-channel TrenchMOS AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER E Non-repetitive avalanche AS energy I Peak non-repetitive AS avalanche current THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance junction ...

Page 3

Philips Semiconductors N-channel TrenchMOS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER I Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse ...

Page 4

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating PD% 120 with heatsink compound 110 100 Ths / C Fig.1. Normalised power dissipation. PD% = 100 P ...

Page 5

Philips Semiconductors N-channel TrenchMOS Drain current Gate-source voltage, VGS (V) Fig.7. Typical transfer characteristics f Transconductance, gfs (S) ...

Page 6

Philips Semiconductors N-channel TrenchMOS Gate-source voltage, VGS ( VDD = ...

Page 7

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Dimensions in mm Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 Net Mass DIMENSIONS (mm are the original dimensions) A UNIT 4.6 mm 4.0 Notes 1. Terminal dimensions ...

Page 8

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Dimensions in mm Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 exposed tabs Net Mass DIMENSIONS (mm are the original dimensions) A UNIT 4.4 mm 4.0 Note 1. ...

Page 9

Philips Semiconductors N-channel TrenchMOS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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