PHX9NQ20T,127 NXP Semiconductors, PHX9NQ20T,127 Datasheet - Page 4

• Manufacturer Part Number: PHX9NQ20T,127
• Description: MOSFET N-CH 200V 5.2A TO220F
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHX9NQ20T,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055769127; PHX9NQ20T; PHX9NQ20T

Philips Semiconductors
November 2000
N-channel TrenchMOS
100
0.1
10
1
I
Fig.2. Normalised continuous drain current.
D
120
110
100
120
110
100
1
90
80
70
60
50
40
30
20
10
& I
90
80
70
60
50
40
30
20
10
Peak Pulsed Drain Current, IDM (A)
0
0
ID% = 100 I
Fig.1. Normalised power dissipation.
0
DM
0
PD%
ID%
RDS(on) = VDS/ ID
= f(V
PD% = 100 P
Fig.3. Safe operating area
20
20
DS
Drain-Source Voltage, VDS (V)
); I
40
40
D
10
/I
DM
D 25 ˚C
D.C.
single pulse; parameter t
60
60
D
Ths / C
Ths / C
/P
= f(T
with heatsink compound
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
mb
with heatsink compound
); V
100
100
100
= f(T
transistor
GS
mb
120
120
tp = 10 us
100us
10 ms
100 ms
)
1 ms
10 V
140
140
1000
p
4
0.01
0.45
0.35
0.25
0.15
0.05
10
Fig.5. Typical output characteristics, T
0.1
9
8
7
6
5
4
3
2
1
0
0.5
0.4
0.3
0.2
0.1
10
Fig.6. Typical on-state resistance, T
1
1E-06
0
0
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Tj = 25 C
Transient thermal impedance, Zth j-a (K/W)
Fig.4. Transient thermal impedance.
0.2
0.02
single pulse
0.05
0.1
1
1E-05
0.2
D = 0.5
4.5 V
Z
th j-mb
0.4
PHX9NQ20T , PHF9NQ20T
2
1E-04
Drain-Source Voltage, VDS (V)
= f(t); parameter D = t
0.6
3
Drain Current, ID (A)
R
5 V
Pulse width, tp (s)
I
DS(ON)
0.8
D
1E-03
4
= f(V
1
5
= f(I
1E-02
DS
8 V
1.2
)
6
D
VGS = 10V
)
8 V
Product specification
5.5 V
1E-01
1.4
7
p
VGS = 10V
8
1.6
/T
1E+00 1E+01
j
Tj = 25 C
j
= 25 ˚C.
= 25 ˚C.
9
1.8
5.5 V
4.5 V
Rev 1.100
6 V
6 V
5 V
10
2