BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 8
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BUK9540-100A,127
Manufacturer Part Number
BUK9540-100A,127
Description
MOSFET N-CH 100V 39A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9540-100A127.pdf
(14 pages)
Specifications of BUK9540-100A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056024127
BUK9540-100A
BUK9540-100A
BUK9540-100A
BUK9540-100A
Philips Semiconductors
9397 750 09162
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
I D
function of gate-source voltage; typical values.
(A)
= 25 V
= 0 V
80
60
40
20
0
0
T j = 175 ºC
1
2
T j = 25 ºC
3
I S
(A)
100
V GS (V)
80
60
40
20
0
0.0
03na61
4
T j = 175 ºC
Rev. 03 — 08 February 2002
0.5
1.0
Fig 14. Gate-source voltage as a function of turn-on
T j = 25 ºC
T
j
1.5
= 25 C; I
V GS
(V)
gate charge; typical values.
V SD (V)
5
4
3
2
1
0
0
03na62
2.0
D
V DD = 14 (V)
= 25 A
BUK95/9640-100A
20
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
40
V DD = 80 (V)
Q G (nC)
03na63
60
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