BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9540-100A,127
• Description: MOSFET N-CH 100V 39A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9540-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056024127; BUK9540-100A; BUK9540-100A

Philips Semiconductors
9397 750 09162
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
I D
function of gate-source voltage; typical values.
(A)
= 25 V
= 0 V
80
60
40
20
0
0
T j = 175 ºC
1
2
T j = 25 ºC
3
I S
(A)
100
V GS (V)
80
60
40
20
0
0.0
03na61
4
T j = 175 ºC
Rev. 03 — 08 February 2002
0.5
1.0
Fig 14. Gate-source voltage as a function of turn-on
T j = 25 ºC
T
j
1.5
= 25 C; I
V GS
(V)
gate charge; typical values.
V SD (V)
5
4
3
2
1
0
0
03na62
2.0
D
V DD = 14 (V)
= 25 A
BUK95/9640-100A
20
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
40
V DD = 80 (V)
Q G (nC)
03na63
60
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