BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 7

• Manufacturer Part Number: BUK9540-100A,127
• Description: MOSFET N-CH 100V 39A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9540-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056024127; BUK9540-100A; BUK9540-100A

Philips Semiconductors
9397 750 09162
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 1 mA; V
= 25 C; V
(V)
g fs
(S)
junction temperature.
drain current; typical values.
80
60
40
20
2.5
1.5
0.5
0
2
1
0
0
-60
DS
DS
= V
= 25 V
10
0
GS
max
min
typ
20
60
120
30
T j ( C)
I D (A)
03aa33
03na65
180
40
Rev. 03 — 08 February 2002
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
C
(pF)
= 25 C; V
6000
5000
4000
3000
2000
1000
(A)
I D
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
0
10 -2
0
DS
BUK95/9640-100A
C rss
C iss
C oss
= V
10 -1
GS
1
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
min
1
typ
2
max
10
V GS (V)
V DS (V)
03aa36
03na68
10 2
3
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