BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 3
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BUK9540-100A,127
Manufacturer Part Number
BUK9540-100A,127
Description
MOSFET N-CH 100V 39A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9540-100A127.pdf
(14 pages)
Specifications of BUK9540-100A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056024127
BUK9540-100A
BUK9540-100A
BUK9540-100A
BUK9540-100A
Philips Semiconductors
9397 750 09162
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
mb
P der
P
(%)
function of mounting base temperature.
der
= 25 C; I
120
80
40
0
I D
(A)
=
10 3
10 2
0
10
1
---------------------- -
P
1
tot 25 C
P
DM
tot
single pulse.
50
100%
R DSon = V DS / I D
100
150
T mb ( C)
03na19
10
200
DC
Rev. 03 — 08 February 2002
Fig 2. Continuous drain current as a function of
V
GS
I D
(A)
mounting base temperature.
40
30
20
10
0
4.5 V
25
10 2
100 ms
1 ms
10 ms
t p = 10 µs
100 µs
50
BUK95/9640-100A
75
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V DS (V)
125
150
03nh72
175
T mb (ºC)
10 3
03nh74
200
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