BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9540-100A,127
• Description: MOSFET N-CH 100V 39A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9540-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056024127; BUK9540-100A; BUK9540-100A

Philips Semiconductors
9397 750 09162
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
mb
P der
P
(%)
function of mounting base temperature.
der
= 25 C; I
120
80
40
0
I D
(A)
=
10 3
10 2
0
10
1
---------------------- -
P
1
tot 25 C
P
DM
tot
single pulse.
50
100%
R DSon = V DS / I D
100
150
T mb ( C)
03na19
10
200
DC
Rev. 03 — 08 February 2002
Fig 2. Continuous drain current as a function of
V
GS
I D
(A)
mounting base temperature.
40
30
20
10
0
4.5 V
25
10 2
100 ms
1 ms
10 ms
t p = 10 µs
100 µs
50
BUK95/9640-100A
75
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V DS (V)
125
150
03nh72
175
T mb (ºC)
10 3
03nh74
200
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