BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 12

• Manufacturer Part Number: BUK9540-100A,127
• Description: MOSFET N-CH 100V 39A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9540-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056024127; BUK9540-100A; BUK9540-100A

Philips Semiconductors
11. Revision history
Table 6:
9397 750 09162
Product data
Rev Date
03
02
01
20020208
20000501
19991201
Revision history
CPCN
-
-
-
Description
Product data (9397 750 09162); third version; supersedes BUK95/9640-100A-02 of
01 May 2000. Modifications:
Product data; second version, supersedes BUK95/9640-100-01 of 01 December 1999.
Produce data; initial version.
•
•
•
Conversion from Lotus Manuscript to Databuilder II
Thermal resistance from junction to mounting base (R
1.1 K/W to 0.95 K/W in
Changes in
– Drain current (I
– Peak drain current (I
– Total power dissipation (P
149 A to 159 A.
Table 3 “Limiting
Rev. 03 — 08 February 2002
D
) and reverse drain current (I
DM
Table 4 “Thermal characteristics”
) and peak reverse drain current (I
tot
values”:
) value changed from 138 W to 158 W.
BUK95/9640-100A
DR
) value changed from 37 A to 39 A
th(j-mb)
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
) value changed from
DRM
) value changed from
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