BUK9540-100A,127 NXP Semiconductors, BUK9540-100A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9540-100A,127
• Description: MOSFET N-CH 100V 39A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9540-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056024127; BUK9540-100A; BUK9540-100A

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09162
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
D
DM
DR
DRM
DS
tot
j
DS
DGR
GS
tot
stg
j
DS(AL)S
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
drain current (peak value)
total power dissipation
storage temperature
operating junction temperature
reverse drain current
peak reverse drain current
non-repetitive avalanche energy
Limiting values
Quick reference data
Rev. 03 — 08 February 2002
Conditions
T
T
T
T
T
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
j
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
100 V; V
and
mb
= 25 C
GS
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
= 10 V; I
GS
= 5 V
= 5 V;
= 5 V; R
= 5 V;
p
p
D
D
= 25 A
D
10 s;
10 s
Figure 2
= 25 A
GS
= 25 A
D
= 39 A;
= 50 ;
BUK95/9640-100A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
-
-
34
-
29
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
100
39
158
175
40
43
39
Max
100
100
39
28
159
158
+175
+175
39
159
182
15
Unit
V
A
W
m
m
m
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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