PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
October 1999
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
N-channel logic level TrenchMOS
discharge during transport or handling.
Fig.16. SOT428 surface mounting package. Centre pin connected to mounting base.
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
Note
1. Measured from heatsink back to lead.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT428
max.
2.38
2.22
L 2
A
A 1
0.65
0.45
(1)
b 1
0.89
0.71
A 2
1
e
0.89
0.71
b 2
e 1
IEC
E
b
2
max.
1.1
0.9
b 1
b
5.36
5.26
b 2
3
JEDEC
w
0.4
0.2
D
L
A
c
M
H E
REFERENCES
A
max.
6.22
5.98
D
(TM)
mounting
0
max.
4.81
4.45
base
D 1
seating plane
L 1
A 1
max.
scale
6.73
6.47
EIAJ
8
transistor
10
E
c
A 2
min.
4.0
A
E 1
20 mm
y
2.285 4.57
e
e 1
E 1
max.
10.4
H E
9.6
2.95
2.55
L
PROJECTION
EUROPEAN
min.
0.5
L 1
D 1
0.7
0.5
L 2
0.2
w
ISSUE DATE
98-04-07
max.
0.2
y
PSMN005-25D
SOT428
Product specification
Rev 1.100