PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet
PSMN005-30K,518
Specifications of PSMN005-30K,518
PSMN005-30K /T3
PSMN005-30K /T3
Related parts for PSMN005-30K,518
PSMN005-30K,518 Summary of contents
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... Rev. 01 — 6 March 2002 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN005-30K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications ...
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... S I peak source (diode forward) current T SM 9397 750 09334 Product data Conditions 150 Conditions 150 10V pulsed pulsed Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Typ Max Unit - 3 150 C 4.4 5.5 m Min Max Unit - 3 +150 C 55 +150 ...
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... Product data 03aa17 120 I der (%) 150 200 T sp (º der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03aa25 0 50 100 150 200 ------------------- 100 03ah05 µs 100 µs ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09334 Product data Conditions Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Min Typ Max Unit Figure K/W 03ah04 ...
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... SD t reverse recovery time rr Q recovery charge r 9397 750 09334 Product data Conditions I = 250 mA 150 150 4 4 MHz /dt = 100 Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Min Typ Max Unit 100 nA - 4 3100 - pF - 605 - pF - 405 - 0.81 1 © ...
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... V 1.2 0 ---------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03ah08 V DS > DSon 150 ºC 25 º (V) > DSon 03af18 0 60 120 180 T j (ºC) DSon © ...
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... Product data 03af65 120 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF) C iss oss C rss (V) Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03af66 min typ max 03ah10 10 2 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Product data 03ah09 ( º Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03ah11 º (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012 Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET detail 1.0 0.7 1.05 0.25 0.25 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020306 - Product Data; initial version 9397 750 09334 Product data Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... SiliconMAX — trademark of Koninklijke Philips Electronics N.V. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 6 March 2002 Rev. 01 — 6 March 2002 PSMN005-30K PSMN005-30K TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 March 2002 Document order number: 9397 750 09334 PSMN005-30K TrenchMOS™ logic level FET ...