PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
October 1999
Fig.9. Normalised drain-source on-state resistance.
N-channel logic level TrenchMOS
50
45
40
35
30
25
20
15
10
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
2
1
0
5
0
Fig.8. Typical transconductance, T
-60
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
0.2 0.4 0.6 0.8
Fig.7. Typical transfer characteristics.
-40
5
-20
10
R
0
DS(ON)
Gate-source voltage, VGS (V)
Junction temperature, Tj (C)
15
20
1
Drain current, ID (A)
/R
I
1.2 1.4 1.6 1.8
D
g
20
40
fs
DS(ON)25 ˚C
= f(V
= f(I
60
25
175 C
GS
D
)
80
)
30
= f(T
100
Tj = 25 C
2
35
2.2 2.4 2.6 2.8
j
)
120
Tj = 25 C
j
40
= 25 ˚C .
140
175 C
45
160
180
50
3
(TM)
6
transistor
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
2.25
1.75
1.25
0.75
0.25
10000
1.5
0.5
1000
V
100
2
1
0
Fig.12. Typical capacitances, C
-60
GS(TO)
I
C = f(V
Threshold Voltage, VGS(TO) (V)
D
0.1
0
= f(V
Drain current, ID (A)
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
VDS = 5 V
-40
Fig.10. Gate threshold voltage.
= f(T
DS
-20
GS)
minimum
0.5
); conditions: V
; conditions: T
j
); conditions: I
0
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
20
Junction Temperature, Tj (C)
1
1
typical
40
60
minimum
1.5
j
maximum
typical
GS
= 25 ˚C; V
D
PSMN005-25D
80
= 1 mA; V
= 0 V; f = 1 MHz
100
Product specification
10
maximum
2
iss
120
, C
DS
140
DS
Ciss
Coss
Crss
oss
2.5
= V
, C
= V
Rev 1.100
160
GS
rss
GS
100
.
180
3