PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
October 1999
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Logic level compatible
SiliconMAX products use the latest
Philips
achieve
on-state
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN005-25D is supplied in
the
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 It is not possible to make connection to pin 2 of the SOT428 package.
2 Continuous current rating limited by package.
GENERAL DESCRIPTION
SYMBOL PARAMETER
V
V
V
V
I
I
P
T
N-channel logic level TrenchMOS
D
DM
j
DSS
DGR
GS
GSM
D
, T
stg
SOT428
Trench
the
resistance
Drain-source voltage
Drain-gate voltage
Continuous gate-source
voltage
Peak pulsed gate-source
voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
lowest
(Dpak)
technology
in
possible
surface
each
to
PINNING
SYMBOL
PIN
tab
1
2
3
CONDITIONS
T
T
T
T
T
T
T
j
j
j
mb
mb
mb
mb
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
150 ˚C
gate
drain
source
drain
g
1
DESCRIPTION
(TM)
2
GS
GS
d
s
= 5 V
transistor
= 5 V
GS
= 20 k
QUICK REFERENCE DATA
R
SOT428 (DPAK)
R
DS(ON)
DS(ON)
MIN.
- 55
V
5.8 m (V
-
-
-
-
-
-
-
-
7.5 m (V
PSMN005-25D
I
DSS
D
Product specification
1
= 75 A
= 25 V
tab
2
MAX.
240
125
175
75
25
25
70
3
15
20
2
GS
GS
= 10 V)
Rev 1.100
= 5 V)
UNIT
˚C
W
V
V
V
V
A
A
A