PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
October 1999
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
SYMBOL PARAMETER
I
I
V
t
Q
j
N-channel logic level TrenchMOS
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
I
I
V
F
F
GS
= 25 A; V
= 25 A; -dI
= 0 V; V
(TM)
GS
R
F
/dt = 100 A/ s;
= 25 V
= 0 V
4
transistor
MIN. TYP. MAX. UNIT
-
-
-
-
-
PSMN005-25D
0.95
0.27
140
Product specification
-
-
240
1.2
75
-
-
Rev 1.100
ns
A
A
V
C