PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet
PSMN005-25D,118
Specifications of PSMN005-25D,118
PSMN005-25D /T3
PSMN005-25D /T3
Related parts for PSMN005-25D,118
PSMN005-25D,118 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS Product specification (TM) transistor October 1999 ...
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... Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN005-25D is supplied in the SOT428 (Dpak) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ...
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... 175˚ 0 Resistive load Measured tab to centre of die Measured from source lead to source bond pad MHz Product specification PSMN005-25D MIN. MAX. - 120 - 75 MIN. TYP. MAX. UNIT - - 1 MIN. TYP. MAX. UNIT -55˚ 1 175˚C 0 -55˚ 2 5.8 - 6.2 7 0.02 100 - 0.05 ...
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... Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse recovery time rr Q Reverse recovery charge rr October 1999 (TM) transistor CONDITIONS -dI /dt = 100 Product specification PSMN005-25D MIN. TYP. MAX. UNIT - - 240 A - 0.95 1 140 - Rev 1.100 ...
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... 100 100 ms 100 = 25 ˚ PSMN005-25D Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter ...
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... DS(ON)25 ˚C October 1999 (TM) transistor 2.2 2.4 2.6 2 175 ˚ 100 120 140 160 180 = f PSMN005-25D Threshold Voltage, VGS(TO) (V) 2.25 2 maximum 1.75 1.5 typical 1.25 1 minimum 0.75 0.5 0.25 0 -60 -40 - Junction Temperature, Tj (C) Fig.10. Gate threshold voltage f(T ); conditions mA; V GS(TO) ...
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... SDS GS October 1999 (TM) transistor 100 110 ) 0.7 0.8 0.9 1 1.1 1 parameter PSMN005-25D Maximum Avalanche Current, I (A) AS 100 Tj prior to avalanche = 150 0.001 0.01 0.1 Avalanche time Fig.15. Maximum permissible non-repetitive avalanche current (I ) versus avalanche time (t AS unclamped inductive load Product specification (ms) ) ...
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... REFERENCES IEC JEDEC EIAJ 8 PSMN005-25D SOT428 max. max. min. 0.7 10.4 2.95 2.285 4.57 0.2 0.2 0.5 0.5 9.6 2.55 ...
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... Philips Semiconductors N-channel logic level TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm October 1999 (TM) transistor 7.0 2.15 2.5 4.57 Fig.17. SOT428 : soldering pattern for surface mounting . 9 Product specification PSMN005-25D 7.0 1.5 Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 (TM) transistor 10 Product specification PSMN005-25D Rev 1.100 ...
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... Philips Semiconductors N-channel logic level TrenchMOS October 1999 (TM) transistor NOTES 11 Product specification PSMN005-25D Rev 1.100 ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...