IRFN214BTA_FP001 Fairchild Semiconductor, IRFN214BTA_FP001 Datasheet - Page 4

• Manufacturer Part Number: IRFN214BTA_FP001
• Description: MOSFET N-CH 250V 0.6A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of IRFN214BTA_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 10.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
10
10
Figure 7. Breakdown Voltage Variation
-1
-2
-3
1
0
10
0
-50
Operation in This Area
is Limited by R
T
vs Temperature
J
V
, Junction Temperature [
DS
0
1 0
1 0
1 0
, Drain-Source Voltage [V]
※
10
1. T
2. T
3. Single Pulse
2
1
0
1 0
D S(on)
Notes :
1
A
J
= 150
= 25
- 4
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
o
0 .1
0 .2
50
C
o
C
DC
Figure 11. Transient Thermal Response Curve
1 s
100
1 0
(Continued)
100 ms
o
C]
- 3
s in g le p u ls e
※
10 ms
1. V
2. I
10
Notes :
2
D
1 ms
G S
t
= 250 µA
1
= 0 V
100 s
150
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
1 0
- 2
200
1 0
- 1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
0
-50
N o t e s :
P
50
DM
θ J A
J M
vs Case Temperature
- T
( t ) = 1 0 0
T
T
A
A
vs Temperature
J
, Ambient Temperature [ ]
, Junction Temperature [
= P
0
t
1
1 0
D M
t
75
2
℃
1
* Z
/ W M a x .
1
/ t
θ J A
2
50
( t )
100
1 0
100
℃
o
2
C]
125
※
1. V
2. I
150
Notes :
D
GS
= 0.25 A
= 10 V
150
200
Rev.A, May 2004