FQP6N50C Fairchild Semiconductor, FQP6N50C Datasheet

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FQP6N50C

Manufacturer Part Number
FQP6N50C
Description
MOSFET N-CH 500V 5.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP6N50C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
98W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQP6N50C
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FQP6N50C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP6N50C
Manufacturer:
FSC
Quantity:
86 755
©2008 Fairchild Semiconductor Corporation
FQD6N50C / FQU6N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)*
Parameter
= 25°C)
Parameter
G
T
C
D
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 4.5A, 500V, R
• Low gate charge (typical 19nC)
• Low Crss (typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
FQD6N50C / FQU6N50C
DS(on)
Typ
-
-
-
-55 to +150
= 1.2
0.49
500
300
300
4.5
2.7
4.5
6.1
4.5
2.5
18
61
30
G
@V
! ! ! !
! ! ! !
Max
2.05
110
GS
50
October 2008
QFET
= 10 V
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. B1, October 2008
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQP6N50C

FQP6N50C Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • 4.5A, 500V, R • Low gate charge (typical 19nC) • Low Crss (typical 15pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 26.6 mH 4.5A 50V 4.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 1000 C 800 iss C oss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation Notes : ※ 1. 250µs Pulse Test ℃ Figure 2. Transfer Characteristics 10V ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 250 µA 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 5 4 100 s ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation D - PAK Dimensions in Millimeters Rev. B1, October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. B1, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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