FQD7N10TM Fairchild Semiconductor, FQD7N10TM Datasheet - Page 2

MOSFET N-CH 100V 5.8A DPAK

FQD7N10TM

Manufacturer Part Number
FQD7N10TM
Description
MOSFET N-CH 100V 5.8A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQD7N10TM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQD7N10TMTR
Change To
Product Id Description : All devices packaged in D/I-PAK(Non JEDEC TYPE)
Affected FSIDs :
FJD3076TF_NL
FQD10N20CTF_NL
FJD3076TM
FQD10N20CTM
FQD10N20CTF
FQD10N20CTM_NL
Pg. 2

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