FDD6N50TF Fairchild Semiconductor, FDD6N50TF Datasheet - Page 3

• Manufacturer Part Number: FDD6N50TF
• Description: MOSFET N-CH 500V 6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N50TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N50TFTR

FDD6N50/FDU6N50 REV. A
Typical Performance Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1000
20
15
10
100
Figure 5. Capacitance Characteristics
5
0
Figure 3. On-Resistance Variation vs.
10
0
Figure 1. On-Region Characteristics
0
10
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
10
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
V
20
GS
C
C
C
iss
= 10V
oss
rss
10
30
10
1
V
GS
C
C
C
iss
oss
rss
= 20V
= C
= C
= C
15
∝
∝
gs
gd
ds
1. 250 レ s Pulse Test
2. T
Note : T
+ C
+ C
Notes :
∝
40
1. V
2. f = 1 MHz
gd
C
gd
Notes :
= 25∩
(C
GS
J
ds
= 25∩
= 0 V
= shorted)
20
50
3
10
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
-2
1
0
-1
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
1
0
0
0.2
2
Figure 6. Gate Charge Characteristics
Variation vs. Source Current
0.4
150∩
0.6
4
150∩
25∩
and Temperature
V
V
Q
SD
GS
G
5
, Total Gate Charge [nC]
25∩
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
0.8
V
DS
V
DS
= 400V
V
DS
= 250V
1.0
= 100V
6
-55∩
1.2
10
∝
∝
1. V
2. 250 レ s Pulse Test
1. V
2. 250 レ s Pulse Test
Notes :
∝
1.4
Note
GS
8
Note : I
DS
= 0V
= 40V
www.fairchildsemi.com
D
= 6A
1.6
1.8
15
10