FDA16N50 Fairchild Semiconductor, FDA16N50 Datasheet

MOSFET N-CH 500V 16.5A TO-3P

FDA16N50

Manufacturer Part Number
FDA16N50
Description
MOSFET N-CH 500V 16.5A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA16N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 8.3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
205W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA16N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDA16N50
Manufacturer:
Fairchi/ON
Quantity:
95 000
Company:
Part Number:
FDA16N50
Quantity:
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Part Number:
FDA16N50LDTU
Manufacturer:
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Quantity:
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©2007 Fairchild Semiconductor Corporation
FDA16N50 Rev. B
FDA16N50
500V N-Channel MOSFET
Features
• 16.5A, 500V, R
• Low gate charge ( typical 32 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 20 pF)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
DS(on)
= 0.38Ω @V
G
D
S
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
= 10 V
Parameter
C
= 25°C)
TO-3PN
FDA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FDA16N50
-55 to +150
16.5
16.5
20.5
500
±30
780
205
300
9.9
4.5
2.1
S
66
D
Max
0.6
40
--
UniFET
April 2007
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDA16N50 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA16N50 Rev. B Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 16.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA16N50 Rev. B Package Reel Size TO-3PN - TO-3PN - T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... Drain Current and Gate Voltage 0.6 0 10V GS 0.4 0.3 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C 2000 iss 1000 C rss Drain-Source Voltage [V] DS FDA16N50 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V Note : ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited DS(on Drain-Source Voltage [ FDA16N50 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current 20 10 μ s 100 μ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDA16N50 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA16N50 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA16N50 Rev. B TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA16N50 Rev. B HiSeC™ Programmable Active Droop™ ® i-Lo™ QFET QS™ ImpliedDisconnect™ IntelliMAX™ QT Optoelectronics™ ISOPLANAR™ ...

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