FQAF34N25 Fairchild Semiconductor, FQAF34N25 Datasheet - Page 3

• Manufacturer Part Number: FQAF34N25
• Description: MOSFET N-CH 250V 21.7A TO-3PF
• Manufacturer: Fairchild Semiconductor

Specifications of FQAF34N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2750pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
5000
4000
3000
2000
1000
10
10
0.4
0.3
0.2
0.1
0.0
0
10
1
0
10
0
Figure 5. Capacitance Characteristics.
-1
-1
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
30
V
V
DS
DS
60
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
V
GS
V
GS
= 20V
90
C
C
C
= 10V
oss
rss
iss
120
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
gd
gd
※ Notes :
150
(C
1. V
2. f = 1 MHz
ds
J
= shorted)
GS
= 25℃
= 0 V
180
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 6. Gate -Charge Characteristics.
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics.
Variation with Source Current
150℃
0.4
150℃
25℃
4
20
V
V
and Temperature.
Q
SD
GS
0.6
V
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
DS
V
25℃
DS
= 200V
V
= 125V
DS
= 50V
0.8
-55℃
40
6
1.0
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
60
8
DS
GS
= 50V
= 0V
1.2
D
= 34 A
Rev. A, October 2001
80
1.4
10