FQP18N50V2 Fairchild Semiconductor, FQP18N50V2 Datasheet - Page 3

• Manufacturer Part Number: FQP18N50V2
• Description: MOSFET N-CH 500V 18A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP18N50V2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
2500
2000
1500
1000
0.5
0.4
0.3
0.2
0.1
0.0
500
-1
1
0
10
0
10
0
-1
Top :
Bottom :
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
10
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
I
D
10
, Drain Current [A]
10
0
0
C
rss
30
V
C
V
GS
oss
GS
= 20V
= 10V
C
C
C
C
40
iss
oss
rss
iss
= C
= C
= C
※ Notes :
1. 250 μ s Pulse Test
2. T
10
gs
gd
ds
10
※ Note : T
+ C
1
+ C
C
1
= 25 ℃
gd
gd
(C
50
※ Notes :
ds
1. V
2. f = 1 MHz
= shorted)
J
= 25 ℃
GS
= 0 V
60
10
10
10
12
10
8
6
4
2
0
10
10
10
-1
1
0
0
4
-1
1
0
0.2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
150℃
5
5
25 ℃
150 ℃
V
V
SD
0.6
Q
and Temperature
GS
G
25℃
, Source-Drain Voltage [V]
6
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
10
DS
V
0.8
= 160V
DS
V
= 100V
DS
7
= 40V
-55 ℃
1.0
15
8
1.2
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
※ Note : I
1. V
2. 250μ s Pulse Test
GS
20
DS
= 0V
= 40V
9
D
1.4
= 18A
Rev. B, August 2002
1.6
25
10