FQH44N10 Fairchild Semiconductor, FQH44N10 Datasheet - Page 4

• Manufacturer Part Number: FQH44N10
• Description: MOSFET N-CH 100V 48A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQH44N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-1
Figure 9. Maximum Safe Operating Area
-100
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
10
= 175
= 25
- 5
1
D = 0 .5
0 .0 2
0 .0 1
DS(on)
0 .0 5
50
DC
o
0 .1
0 .2
C
o
C
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
- 4
C]
s i n g l e p u ls e
100 s
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
150
= 0 V
10 s
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
-100
25
※ N o te s :
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
- 1
θ
J M
P
J C
-50
- T
DM
50
( t) = 0 .8 3 ℃ /W M a x .
C
= P
vs. Case Temperature
T
D M
vs. Temperature
J
T
t
, Junction Temperature [
1
C
75
* Z
t
1 0
0
, Case Temperature [ ℃ ]
2
1
/t
θ
0
2
J C
( t)
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 21.75 A
= 10 V
Rev. A, February 2004
200
175