SFH9250L Fairchild Semiconductor, SFH9250L Datasheet - Page 4

• Manufacturer Part Number: SFH9250L
• Description: MOSFET P-CH 200V 19.5A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of SFH9250L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 9.8A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 19.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 5V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFH9250L
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-100
-1
2
1
0
10
0
Fig 7. Breakdown Voltage vs. Temperature
-50
Fig 9. Max. Safe Operating Area
T
-V
J
Operation in This Area
is Limited by R
, Junction Temperature [
DS
1 0
1 0
1 0
0
, Drain-Source Voltage [V]
※ Notes :
- 1
- 2
10
1 0
1. T
2. T
3. Single Pulse
0
1
- 5
C
J
= 150
= 25
0 . 0 2
0 . 0 1
D = 0 .5
0 . 0 5
DS(on)
0 . 1
0 . 2
o
C
o
50
C
DC
10 ms
1 0
- 4
100
s in g le p u ls e
1 ms
t
o
C]
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
10
※ Note :
100 s
1. V
2. I
2
D
GS
= -250 μ A
150
= 0 V
1 0
Fig 11. Thermal Response
- 3
200
1 0
- 2
Fig 10. Max. Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
20
15
10
-100
5
0
25
※ N o te s :
1 0
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
P
DM
- 1
Fig 8. On-Resistance vs. Temperature
θ J C
J M
- T
( t ) = 0 . 6 1 ℃ / W M a x .
-50
C
= P
50
t
1
D M
t
T
2
1 0
* Z
J
T
, Junction Temperature [
0
C
1
0
/ t
θ J C
, Case Temperature [ ℃ ]
2
( t )
75
50
1 0
POWER MOSFET
1
100
P-CHANNEL
100
o
C]
※ Note :
125
1. V
2. I
150
D
GS
= -9.8 A
= -5 V
200
150