FQI47P06TU Fairchild Semiconductor, FQI47P06TU Datasheet

FQI47P06TU

Manufacturer Part Number

FQI47P06TU

Description

MOSFET P-CH 60V 47A I2PAK

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheets

1.FQI4N20LTU.pdf (1 pages)

2.FQB47P06TM_AM002.pdf (9 pages)

Specifications of FQI47P06TU

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26 mOhm @ 23.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

47A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

110nC @ 10V

Input Capacitance (ciss) @ Vds

3600pF @ 25V

Power - Max

3.75W

Mounting Type

Through Hole

Package / Case

I²Pak, TO-262 (3 straight leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FQI47P06TU

Manufacturer:

ROHM

Quantity:

1 393

Current page: 1 of 9
Download datasheet (2Mb)

FQB47P06/FQI47P06 Rev. A3

FQB47P06 / FQI47P06

60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

Absolute Maximum Ratings

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

DSS

GSS

Symbol

θJC

θJA

, T

STG

Drain-Source Voltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

FQB Series

-PAK

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

= 25°C) *

= 25°C)

= 25°C unless otherwise noted

= 25°C)

= 100°C)

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Features

• -47A, -60V, R

• Low gate charge ( typical 84 nC)

• Low Crss ( typical 320 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant

FQI Series

-PAK

FQB47P06 / FQI47P06

DS(on)

Typ

-55 to +175

= 0.026Ω @V

-33.2

-188

3.75

1.06

± 25

820

-7.0

160

300

-60

-47

Max

0.94

62.5

= -10 V

October 2008

QFET

www.fairchildsemi.com

Units

W/°C

Units

°C/W

V/ns

°C

Related parts for FQI47P06TU

FQI47P06TU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQB47P06/FQI47P06 Rev. A3 Features • -47A, -60V, R • Low gate charge ( typical 84 nC) • Low Crss ( typical 320 pF) • Fast switching • ...

Page 2

Elerical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS /∆T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On Characteristics ...

Page 3

Typical Characteristics V GS Top : - 5.0 V Bottom : - 4 ...

Page 4

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs. Temperature 3 10 Operation in This Area is Limited by R DS(on ...

Page 5

Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB47P06/FQI47P06 Rev. A3 Gate Charge Test Circuit & Waveform www.fairchildsemi.com ...

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms ...

Page 7

Mechanical Dimensions FQB47P06/FQI47P06 Rev PAK Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FQB47P06/FQI47P06 Rev PAK Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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