FQAF9N50 Fairchild Semiconductor, FQAF9N50 Datasheet - Page 18

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FQAF9N50

Manufacturer Part Number
FQAF9N50
Description
MOSFET N-CH 500V 7.2A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQAF9N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
730 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1450pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQAF9N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
www.fairchildsemi.com
SuperSOT™-8
FDR8305N
FDR6580
NDH831N
FDR6674A
FDR4420A
FDR6678A
NDH8321C
FDR8702H
NDH8521C
FDR8508P
NDH8502P
FDR858P
FDR856P
FDR8308P
NDH8304P
NDH8302P
FDR844P
FDR840P
FDR838P
FDR836P
NDH834P
NDH832P
FDR842P
SuperSOT-8 N-Channel
SuperSOT-8 Complementary N- and P-Channel
SuperSOT-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
30 | -30
BV
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
20
30
30
30
DSS
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
0.0085
0.009
0.019
10V
0.02
0.05
R
0.038 | 0.08
DS(ON)
0.0095
0.022
0.009
0.013
0.024
0.075
0.028
0.011
0.011
0.017
0.009
4.5V
0.05
0.07
0.06
Max (Ω) @ V
2-13
0.095@2.7V
0.054 | 0.11
0.08@2.7V
0.028
0.014
0.024
0.012
2.5V
0.011
0.016
0.07
GS
=
Replaced by NDH8304P
Replaced by FDC637AN
Replaced by FDS8928A
Replaced by FDS8958A
Replaced by FDN360P
Replaced by FDR858P
Replaced by FDR838P
Replaced by FDR838P
Bold = New Products (introduced January 2003 or later)
1.8V
0.016
0.02
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
16.2
7 | 6
34
33
23
13
21
13
16
53
41
30
18
57
8
= 5V
3.6 | 2.6
I
D
11.2
11.5
4.5
2.7
7.5
3.2
4.2
11
10
10
11
3
8
8
(A)
MOSFETs
P
D
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
1.8
0.8
1.8
0.8
1.8
1.8
(W)

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