HUFA76429S3ST Fairchild Semiconductor, HUFA76429S3ST Datasheet - Page 5

• Manufacturer Part Number: HUFA76429S3ST
• Description: MOSFET N-CH 60V 47A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76429S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 44 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 74 ns, 104 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 203 ns, 100 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
400
300
200
100
3000
1000
100
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
0
1.2
1.0
0.8
0.4
30
0.6
0
-80
0.1
V
GS
= 4.5V, V
JUNCTION TEMPERATURE
-40
R
10
GS
V
DS
T
, GATE TO SOURCE RESISTANCE (Ω)
J
DD
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
= 30V, I
1.0
20
40
D
= 20A
t
r
t
f
80
30
V
GS
C
C
V
(Continued)
C
= V
OSS
RSS
120
GS
ISS
10
DS
o
= 0V, f = 1MHz
= C
≅ C
C)
, I
= C
40
D
GD
DS
160
GS
= 250µA
t
d(ON)
+ C
t
d(OFF)
+ C
GD
GD
200
50
60
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
300
250
200
150
100
10
50
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
GS
DD
I
D
= 10V, V
VOLTAGE vs JUNCTION TEMPERATURE
= 30V
5
GATE CURRENT
= 250µA
-40
R
GS
10
T
10
, GATE TO SOURCE RESISTANCE (Ω)
DD
J
, JUNCTION TEMPERATURE (
= 30V, I
Q
0
g
, GATE CHARGE (nC)
15
20
D
t
d(OFF)
= 20A
40
20
HUFA76429D3, HUFA76429D3S Rev. B
WAVEFORMS IN
DESCENDING ORDER:
80
30
25
I
I
D
D
= 20A
= 10A
t
120
r
30
o
C)
40
t
d(ON)
160
160
t
f
35
200
50
40