FQA33N10 Fairchild Semiconductor, FQA33N10 Datasheet - Page 4

• Manufacturer Part Number: FQA33N10
• Description: MOSFET N-CH 100V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA33N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 52 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 163W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
10
10
Figure 9. Maximum Safe Operating Area
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
V
T
DS
J
vs. Temperature
, Junction Tem perature [
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
1 0
1 0
1 0

Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
10
= 175
= 25
- 5
1
DS(on)
D = 0 . 5
0 . 0 2
50
0 . 0 5
0 . 0 1
o
0 . 2
0 . 1
C
DC
o
C
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
1 0
(Continued)
o
C]
t
- 4
s i n g l e p u l s e
1

Notes :
100 s
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
= 250  A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
40
30
20
10
0
25
Figure 8. On-Resistance Variation
1 0

N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
-50
- 1
P
50
DM

J C
J M
- T
( t ) = 0 . 9 2  /W M a x .
vs. Case Temperature
C
T
= P
T
J
, Junction Temperature [
vs. Temperature
C
t
0
, Case Temperature [
]
1
D M
75
t
1 0
2
* Z
0

J C
1
/t
2
( t )
50
100
1 0
100
1
125
o
C]

Notes :
1. V
2. I
150
150
D
GS
= 16.5 A
= 10 V
175
Rev. A, April 2000
200