FQP6N60 Fairchild Semiconductor, FQP6N60 Datasheet - Page 3
![MOSFET N-CH 600V 6.2A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FQP6N60
Manufacturer Part Number
FQP6N60
Description
MOSFET N-CH 600V 6.2A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP6N60.pdf
(8 pages)
Specifications of FQP6N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 3.1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP6N60
Manufacturer:
FAIRCHILD
Quantity:
4 250
Company:
Part Number:
FQP6N60
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP6N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQP6N60C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQP6N60C
Manufacturer:
Fairchi/ON
Quantity:
17 458
©2000 Fairchild Semiconductor International
Typical Characteristics
1400
1200
1000
10
800
600
400
200
10
10
0
-1
5
4
3
2
1
0
10
1
0
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
2
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
4
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
6
, Drain Current [A]
0
0
C
C
C
oss
rss
iss
V
8
GS
= 20V
V
GS
10
= 10V
C
C
C
iss
oss
rss
= C
= C
Notes :
= C
10
10
1. 250 s Pulse Test
2. T
12
Note : T
gs
ds
gd
1
1
+ C
+ C
C
= 25
gd
Notes :
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
14
= shorted)
= 25
= 0 V
16
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
3
Variation vs. Source Current
150
4
25
V
V
6
150
0.6
Q
GS
SD
and Temperature
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
25
V
V
DS
9
V
DS
0.8
= 480V
DS
= 300V
= 120V
6
12
-55
1.0
Notes :
Notes :
15
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
Note : I
8
DS
GS
1.2
= 50V
= 0V
D
18
= 6.2 A
1.4
Rev. A, April 2000
21
10