HUFA76629D3S Fairchild Semiconductor, HUFA76629D3S Datasheet - Page 3

• Manufacturer Part Number: HUFA76629D3S
• Description: MOSFET N-CH 100V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76629D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1285pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
600
100
1.2
1.0
0.8
0.6
0.4
0.2
10
0
10
0.01
0
0.1
-5
2
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
TEMPERATURE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
V
GS
= 10V
T
50
C
, CASE TEMPERATURE (
V
GS
10
-4
75
= 5V
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
SINGLE PULSE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
-3
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
25
20
15
10
5
0
25
CASE TEMPERATURE
50
10
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
C
I = I
DM
V
= 25
HUFA76629D3, HUFA76629D3S Rev. B
GS
25
x Z
= 4.5V
o
10
P
10
C
JC
DM
o
0
1
0
/t
C DERATE PEAK
125
x R
2
175 - T
o
150
JC
C)
V
t
GS
1
+ T
t
2
C
= 10V
150
C
175
10
10
1
1